HONEYWELL SENSING & CONTROL SEP8706-002
Description
DIODE IR EMITTING AIGAAS SIDELK
Part Number
SEP8706-002
Price
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Manufacturer
HONEYWELL SENSING & CONTROL
Lead Time
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Category
None
Datasheet
Extracted Text
SEP8706 AlGaAs Infrared Emitting Diode FEATURES · Side-looking plastic package · 50¡ (nominal) beam angle · 880 nm wavelength · Higher output power than GaAs at equivalent drive currents · Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger INFRA-20.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SEP8706 is an aluminum gallium arsenide infrared Tolerance 3 plc decimals ±0.005(0.12) emitting diode molded in a side-emitting smoke gray 2 plc decimals ±0.020(0.51) plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current. DIM_071.ds4 Honeywell reserves the right to make changes in order to improve design and 52 h supply the best products possible. SEP8706 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. Honeywell reserves the right to make changes in order to improve design and 53 h supply the best products possible. SEP8706 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Fig. 2 Radiant Intensity vs Angular Displacement gra_030.ds4 Forward Current gra_028.ds4 1.0 10.0 0.9 5.0 0.8 T = 25 °C 0.7 A 2.0 0.6 0.5 1.0 0.4 0.5 0.3 0.2 0.2 0.1 0.0 0.1 -60 -45 -30 -15 0 +15 +30 +45 +60 10 20 30 40 50 100 Forward current - mA Angular displacement - degrees Fig. 3 Fig. 4 Forward Voltage vs Forward Voltage vs Forward Current gra_201.ds4 Temperature gra_208.ds4 1.6 1.60 1.55 1.5 1.50 1.4 1.45 1.3 1.40 1.35 1.2 I = 20 mA F 1.30 1.1 1.25 1.0 1.20 0 10 20 30 40 50 -40 -15 10 35 60 85 Forward current - mA Temperature - °C Fig. 5 Spectral Bandwidth Fig. 6 Coupling Characteristics gra_011.ds4 gra_031.ds4 with SDP8406 10 1.0 0.9 6 0.8 4 0.7 2 0.6 0.5 1.0 0.4 0.6 0.3 0.4 I = 20 mA F 0.2 V = 5V 0.2 CE 0.1 T = 25 °C A 0.0 0.1 760 800 840 880 920 960 1000 0.01 0.02 0.05 0.1 0.2 0.5 1.0 Wavelength - nm Lens-to-lens separation - inches Honeywell reserves the right to make changes in order to improve design and 54 h supply the best products possible. Relative intensity Forward voltage - V Relative intensity alized radiant int ity Light current - mA Forward voltage - V Norm ens SEP8706 AlGaAs Infrared Emitting Diode Fig. 7 Relative Power Output vs Free Air Temperature gra_130.ds4 10 5.0 I = 40 mA 2.0 F I = 30 mA F 1.0 I = 20 mA F 0.5 I = 10 mA F 0.2 0.1 -50 -25 0 +25 +50 +75 +100 T - Free-air temperature - (°C) A All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and 55 h supply the best products possible. Relative power output
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