HONEYWELL SENSING & CONTROL SE1470-004L

SE1470 AlGaAs Infrared Emitting Diode FEATURES · Compact metal can coaxial package · 24¡ (nominal) beam angle · 880 nm wavelength · Higher output power than GaAs at equivalent drive currents · Wide operating temperature range (­55¡C to +125¡C) · Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington INFRA-63.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SE1470 is a high intensity aluminum gallium Tolerance 3 plc decimals ±0.005(0.12) arsenide infrared emitting diode mounted in a glass 2 plc decimals ±0.020(0.51) lensed metal can coaxial package. The package may have a tab or second lead welded to the can as an SE1470-XXX optional feature (SE1470-XXXL). Both leads are flexible .091(2.26) and may be formed as required to fit various mounting configurations. These devices typically exhibit 70% CATHODE (CASE) greater power intensity than gallium arsenide devices at ANODE the same forward current. .020(0.51) DIA .062(1.57) DIA .079(2.01) DIA .076(1.93) .010(0.25) .095(2.41) DIA .122(3.10) .106(2.69) 1.000(25.40) MIN DIM_001a.ds4 SE1470-XXXL .091(2.26) .020 (0.51) DIA CATHODE ~ ANODE ~ ~ ~ .020 (0.51) DIA .062(1.57) DIA .079(2.01) DIA .076(1.93) .010(0.25) .095(2.41) DIA .122(3.10) .106(2.69) 1.000(25.40) TYPICAL MIN DIM_001b.ds4 Honeywell reserves the right to make changes in order to improve design and 12 h supply the best products possible. ~ ~ SE1470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 75 mW [À] Operating Temperature Range -55¡C to 125¡C Storage Temperature Range -65¡C to 150¡C Soldering Temperature (10 sec) 260¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.71 mW/¡C. Honeywell reserves the right to make changes in order to improve design and 13 h supply the best products possible. SE1470 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Fig. 2 Radiant Intensity vs Angular Displacement gra_007.ds4 Forward Current gra_008.ds4 1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0.0 0.0 0.0 4.0 8.0 12.0 16.0 20.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Forward current - mA Angular displacement - degrees Fig. 3 Fig. 4 Forward Voltage vs Forward Voltage vs Forward Current gra_201.ds4 Temperature gra_202.ds4 1.6 1.6 1.5 1.5 1.4 1.4 1.3 1.3 1.2 1.2 I = 20 mA F 1.1 1.1 1.0 1.0 -50 -25 0 25 50 75 100 125 0 10 20 30 40 50 Temperature - °C Forward current - mA Fig. 5 Spectral Bandwidth Fig. 6 Coupling Characteristics gra_011.ds4 gra_012.ds4 with SD1440 1.0 1.0 0.9 0.8 0.8 0.7 0.6 0.6 0.5 0.4 0.4 0.3 0.2 0.2 0.1 0.0 0.0 760 800 840 880 920 960 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Wavelength - nm Lens-to-lens seperation - inches Honeywell reserves the right to make changes in order to improve design and 14 h supply the best products possible. Relative intensity Forward voltage - V Relative intensity alized radiant inte t Normalized light current Forward voltage - V Norm nsi y SE1470 AlGaAs Infrared Emitting Diode Fig. 7 Relative Power Output vs Free Air Temperature gra_130.ds4 10 5.0 I = 40 mA 2.0 F I = 30 mA F 1.0 I = 20 mA F 0.5 I = 10 mA F 0.2 0.1 -50 -25 0 +25 +50 +75 +100 T - Free-air temperature - (°C) A All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and 15 h supply the best products possible. Relative power output