TPCA8004-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCA8004-H High Speed and High Efficiency DC-DC Converters Unit: mm Notebook PC Applications 0.4±0.1 0.5±0.1 1.27 Portable Equipment Applications 0.05 M A 5 8 • Small footprint due to small and thin package 0.15±0.05 • High speed switching • Small gate charge: Q =37 nC (typ.) g 4 1 0.595 • Low drain-source ON resistance: R = 3.5 mΩ (typ.) DS (ON) 5.0±0.2 A 0.95±0.05 0.166±0.05 • High forward transfer admittance: |Y | =80 S (typ.) fs • Low leakage current: I = 10 µA (max) (V = 30 V) DSS DS 0.05 S S • Enhancement mode: V = 1.1 to 2.3 V (V = 10 V, I = 1 mA) th DS D 1 1.1±0.2 4 Maximum Ratings (Ta = 25°C) 4.25±0.2 Characteristics Symbol Rating Unit 8 5 0.8±0.1 Drain-source voltage V 30 V DSS 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN Drain-gate voltage (R = 20 kΩ) V 30 V DGR GS Gate-source voltage V ±20 V JEDEC ― GSS DC (Note 1) I 40 D JEITA ― Drain current A Pulsed (Note 1) I 120 DP TOSHIBA ― Drain power dissipation (Tc=25℃) P 45 W D Weight: 0.08 g (typ.) Drain power dissipation (t = 10 s) P 2.8 W D (Note 2a) Drain power dissipation (t = 10 s) Circuit Configuration P 1.6 W D (Note 2b) Single pulse avalanche energy E 208 mJ AS 8 6 7 5 (Note 3) Avalanche current I 40 A AR Repetitive avalanche energy E 4.5 mJ AR (Tc=25℃) (Note 4) Channel temperature T 150 °C ch Storage temperature range T −55 to 150 °C stg 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-8-7 6.0±0.3 5.0±0.2 0.6±0.1 3.5±0.2 TPCA8004-H Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case 2.78 °C/W R th (ch-c) (Tc=25℃) Thermal resistance, channel to ambient R 44.6 °C/W th (ch-a) (t = 10 s) (Note 2a) Thermal resistance, channel to ambient R 78.1 °C/W th (ch-a) (t = 10 s) (Note 2b) Marking (Note 5) TPCA Type 8004-H Lot No. ※ Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 × 25.4 × 0.8 25.4 × 25.4 × 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: V = 24 V， T = 25°C (initial)， L = 0.1 mH， R = 25 Ω， I = 40 A DD ch G AR Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2003-8-7 TPCA8004-H Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = ±16 V, V = 0 V   ±10 µA GSS GS DS Drain cut-OFF current I V = 30 V, V = 0 V   10 µA DSS DS GS V I = 10 mA, V = 0 V 30   (BR) DSS D GS Drain-source breakdown voltage V V I = 10 mA, V = −20 V 15   (BR) DSX D GS Gate threshold voltage V V = 10 V, I = 1 mA 1.1  2.3 V th DS D V = 4.5 V, I = 20 A  4.8 6.2 GS D Drain-source ON resistance R mΩ DS (ON) V = 10 V, I = 20 A  3.5 4.6 GS D Forward transfer admittance |Y| V = 10 V, I = 20 A 40 80  S fs DS D Input capacitance C  2265  iss = 10 V, V = 0 V, f = 1 MHz pF Reverse transfer capacitance C V  255  rss DS GS Output capacitance C  1045  oss Rise time t  5  r I = 20A D 10 V V GS V OUT 0 V Turn-ON time t  14  on Switching time ns Fall time t  11  f V ∼ 15 V − DD Turn-OFF time t  50  off < Duty 1%, t = 10 µs = w ∼ V 24 V, V = 10 V, I = 40 A  37  DD − GS D Total gate charge Q g (gate-source plus gate-drain) ∼ V − 24 V, V = 5 V, I = 40 A  20  DD GS D Gate-source charge 1 Q  8.2  nC gs1 ∼ Gate-drain (“miller”) charge Q V 24 V, V = 10 V, I = 40 A  8.7  DD − GS D gd Gate switch charge Q  12.7  SW Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) I    120 A DRP Forward voltage (diode) V I = 40 A, V = 0 V   −1.2 V DSF DR GS 3 2003-8-7 4.7 Ω R = 0.75Ω L TPCA8004-H I – V I – V D DS D DS 50 100 3.8 4 COMMON SOURCE 10 3.6 10 COMMON SOURCE 4 3.9 Ta = 25°C Ta = 25°C 8 4.5 6 4.5 3.8 6 PULSE TEST PULSE TEST 5 40 5 80 3.5 3.4 3.6 30 60 3.4 20 40 3.2 3.2 3 10 20 V = 3V GS V = 2.8V GS 0 0 0 0.2 0.4 0.6 0.8 1 1 3 0 2 4 5 DRAIN-SOURCE VOLTAGE V (V) DRAIN-SOURCE VOLTAGE V (V) DS DS I – V V – V D GS DS GS 100 0.4 COMMON SOURCE COMMON SOURCE Ta = 25℃ V = 10 V DS 80 0.32 PULSE TEST PULSE TEST 60 0.24 40 0.16 I = 40 A D Ta = −55°C 100 20 20 0.08 25 10 0 0 0 1 2 3 4 5 6 0 2 4 6 8 10 GATE-SOURCE VOLTAGE V (V) GATE-SOURCE VOLTAGE V (V) GS GS Y  – I R – I fs D DS (ON) D 1000 100 COMMON SOURCE Ta = 25°C PULSE TEST 100 Ta = −55°C 25 100 10 10 4.5 1 V = 10 V COMMON SOURCE GS V = 10 V DS PULSE TEST 0.1 1 0.1 1 10 100 0.1 1 10 100 DRAIN CURRENT I (A) DRAIN CURRENT I (A) D D 4 2003-8-7 FORWARD TRANSFER ADMITTANCE Y  (S) DRAIN CURRENT I (A) DRAIN CURRENT I (A) fs D D DRAIN-SOURCE ON RESISTANCE R (mΩ) DRAIN-SOURCE VOLTAGE V (V) DRAIN CURRENT I (A) DS (ON) DS D TPCA8004-H R – Ta DS (ON) I – V DR DS 8 1000 COMMON SOURCE COMMON SOURCE I = 40A D Ta = 25°C PULSE TEST PULSE TEST 20A 6 100 10A 10 V = 4.5 V GS 3 4 10 4.5 I = 10A,20A,40A D 2 1 V = 10 V GS 1 V = 0 V GS 0.1 0 −80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1.0 AMBIENT TEMPERATURE Ta (°C) DRAIN-SOURCE VOLTAGE V (V) DS CAPACITANCE – V V – Ta DS th 10000 2.5 C iss 2 1000 1.5 C oss 1 Crss 100 COMMON SOURCE COMMON SOURCE V = 10 V DS V = 0 V 0.5 GS I = 1 mA D f = 1 MHz PULSE TEST Tc = 25°C 10 0 0.1 1 10 100 −80 −40 0 40 80 120 160 DRAIN-SOURCE VOLTAGE V (V) AMBIENT TEMPERATURE Ta (°C) DS DYNAMIC INPUT / OUTPUT CHARACTERISTICS 50 20 COMMON SOURCE I = 40 A D 40 16 Ta = 25°C PULSE TEST 30 12 V = 6 V DD V DS 8 20 12 24 10 4 V GS 0 0 0 8 16 24 32 40 TOTAL GATE CHARGE Q (nC) g 5 2003-8-7 DRAIN POWER DISSIPATION DRAIN-SOURCE ON RESISTANCE P (W) CAPACITANCE C (pF) R (m Ω) D DS (ON) DRAIN-SOURCE VOLTAGE V (V) DS GATE THRESHOLD VOLTAGE DRAIN REVERSE CURRENT V (V) I (A) th DR TPCA8004-H r – t th w 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (1) (2) Device mounted on a glass-epoxy board (b) 100 (Note 2b) (2) (3) Tc=25℃ 10 (3) 1 SINGLE PULSE 0.1 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH t (s) w P – Ta P – Tc D D 3 50 (1)Device mounted on a glass-epoxy board(a) (Note 2a) (1) (2)Device mounted on a 2.5 glass-epoxy board(b) (Note 2b) 40 ｔ＝10s 2 30 (2) 1.5 20 1 10 0.5 0 0 0 40 80 120 160 0 40 80 120 160 AMBIENT TEMPERATURE Ta (°C) CASE TEMPERATURE Tc (°C) SAFE OPERATING AREA 10 100 00 0 I max (PULSED) * D 100 100 t=1ms t=10ms 10 10 I max (CONTINUOUS) * D DC ※ SINGLE NONREPETITIVE PULSE Tc=25℃ 1 1 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. V max DSS 0.1 0.1 0.1 0.1 1 1 10 10 10 100 0 DRAIN-SOURCE VOLTAGE V (V) DS 6 2003-8-7 DRAIN POWER DISSIPATION DRAIN CURRENT I (A) P (W) D D TRANSIENT THERMAL IMPEDANCE r th (℃/W) DRAIN POWER DISSIPATION P (W) D TPCA8004-H RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 7 2003-8-7