MIG150Q6CMB1X TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG150Q6CMB1X (1200V/150A 6in1) High Power Switching Applications Motor Control Applications �� Integrates inverter power circuits and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. �� The electrodes are isolated from the case. �� Low thermal resistance �� V = 2.4 V (typ.) CE (sat) �� UL recognized: File No.E87989 �� Weight: 385 g (typ.) Equivalent Circuit 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 FO IN V GND FO IN V GND FO IN V GND GND IN FO V GND IN FO V GND IN FO V D D D D D D GND V OUT GND V OUT GND V OUT GND V OUT GND V OUT GND V OUT S S S S S S W V U N P 1. V (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. V (V) 6. FO (V) 7. IN (V) D D 8. GND (V) 9. V (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. V (L) 14. FO (L) D D 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 1 2001-11-13 MIG150Q6CMB1X Package Dimensions: TOSHIBA 2-123A1A Unit: mm 1. V (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. V (V) 6. FO (V) 7. IN (V) D D 8. GND (V) 9. V (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. V (L) 14. FO (L) D D 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2 2001-11-13 MIG150Q6CMB1X Signal Terminal Layout Unit: mm 1. V (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. V (V) 6. FO (V) 7. IN (V) D D 8. GND (V) 9. V (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. V (L) 14. FO (L) D D 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 3 2001-11-13 MIG150Q6CMB1X Maximum Ratings (T ���� 25°C) j Stage Characteristics Condition Symbol Rating Unit Supply voltage P-N power terminal V 900 V CC Collector-emitter voltage � V 1200 V CES Collector current Tc � 25°C, DC I 150 A C Inverter Forward current Tc � 25°C, DC I 150� A F Collector power dissipation Tc � 25°C P 1400 W C Junction temperature � T 150 °C j Control supply voltage V -GND terminal V 20 V D D Input voltage IN-GND terminal V 20 V IN Control Fault output voltage FO-GND terminal V 20 V FO Fault output current FO sink current I 14 mA FO Operating temperature � Tc �20~�100 °C Storage temperature range � T �40~�125 °C stg Module Isolation voltage AC 1 min V 2500 V ISO Screw torque M5 � 3 N･m Electrical Characteristics 1. Inverter stage Characteristics Symbol Test Condition Min Typ. MaxUnit T � 25°C � � 1 j Collector cut-off current I V � 1200 V mA CEX CE T � 125°C � � 10 j V � 15 V T � 25°C � 2.4 2.8 D j Collector-emitter saturation voltage V I � 150 A V CE (sat) C T � 125°C � 2.8 �� V � 15 V � 0 V j IN Forward voltage V I � 150 A, T � 25°C � 2.4 2.8� V F F j t �� 2.0 3.0 on V � 600 V, I � 150 A t � 0.6 � CC C c (on) V � 15 V, V � 15 V � 0 V D IN Switching time t � 0.3 � �s T � 25°C, Inductive load rr j t (Note 1) � 1.0 2.0 off t � 0.3 � c (off) Note 1: Switching time test circuit & timing chart 4 2001-11-13 MIG150Q6CMB1X 2. Control stage (T ���� 25°C) j Characteristics Symbol Test Condition Min Typ. MaxUnit High side I �� 13 17 D (H) Control circuit current V � 15 V mA D Low side I � 39 51 D (L) Input on signal voltage V 1.4 1.6 1.8 IN (on) V � 15 V V D Input off signal voltage V 2.2 2.5 2.8 IN (off) Protection I �� 10 12 FO (on) Fault output current V � 15 V mA D Normal I � � 0.1 FO (off) Overcurrent protection trip � Inverter OC V � 15 V, T125°C 240 � � A � D j level Short-circuit protection � Inverter SC V � 15 V, T125°C 240 � � A � D j trip level Overcurrent cut-off time t V � 15 V � 5 � �s off (OC) D Trip level OT 110 118 125 Overtemperature Case temperature °C protection Reset level OTr � 98 � Trip level UV 11.0 12.0 12.5 Control supply under � V voltage protection Reset level UVr 12.0 12.5 13.0 Fault output pulse width t V � 15 V 1 2 3 ms FO D 3. Thermal resistance (Tc ���� 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnit IGBT �� � 0.089 Junction to case thermal resistance R °C/W th (j-c) FRD � � 0.19 Case to fin thermal resistance R Compound is applied � 0.013 � °C/W th (c-f) 5 2001-11-13 MIG150Q6CMB1X Switching Time Test Circuit Intelligent power module TLP559 P V D 0.1 �F 15 k� OUT IN V S 15 V 47 �F GND GND V CC U (V, W) V D I � F 0.1 �F 15 k� 16 mA OUT IN PG V S 15 V 47 �F N GND GND Timing Chart Input pulse 15 V V Waveform IN 2.5 V 1.6 V 0 90% I rr I rr I Waveform C 20% I rr t rr 90% V Waveform CE 10% 10% 10% 10% t t c (off) c (on) t t off on 6 2001-11-13 MIG150Q6CMB1X 4. Recommended conditions for application Characteristics Symbol Test Condition Min Typ. MaxUnit Supply voltage V P-N power terminal � 600 800 V CC Control supply voltage V V -GND signal terminal 13.5 15 16.5 V D D Carrier frequency fc PWM control �� � 20 kHz Switching time test circuit Dead time t 5 � �� �s dead (Note 2) Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V V Waveform IN 0 15 V V Waveform IN 0 t t dead dead 7 2001-11-13 MIG150Q6CMB1X I – V I – V C CE C CE 300 300 Common emitter Common emitter V � 17 V D T � 25°C T � 125°C j j V � 17 V D 200 200 VD � 13 V VD � 13 V V � 15 V D 100 100 V � 15 V D 0 0 0 1 2 3 4 0 1 2 3 4 Collector-emitter voltage V (V) Collector-emitter voltage V (V) CE CE Switching time – I Switching time – I C C 10 10 t on t on t off t off 1 1 t c (on) t c (on) t c (off) tc (off) 0.1 0.1 T � 25°C T � 125°C j j V � 600 V V � 600 V CC CC V � 15 V V � 15 V D D L-Load L-Load 0.01 0.01 0 50 100 150 200 0 50 100 150 200 Collector current I (A) Collector current I (A) C C I – V t , I – I F F rr rr F 300 100 Common cathode 200 Irr trr 10 T � 125°C j T � 25°C j 100 Common cathode T � 25°C j T � 125°C j 0 1 0 1 2 3 4 0 50 100 150 200 Forward voltage V (V) Forward current I (A) F F 8 2001-11-13 Forward current I (A) Switching time (�s) Collector current I (A) F C Peak reverse recovery current I (A) rr Reverse recovery time t (� 10 ns) Switching time (�s) Collector current I (A) rr C MIG150Q6CMB1X OC – Tc I – f D (H) c 500 40 400 30 300 20 200 10 100 V � 15 V D T � 25°C j V � 15 V D 0 0 0 25 50 100 75 125 150 0 5 10 20 15 25 Case temperature Tc (°C) Carrier frequency f (kHz) c I – f Reverse bias SOA D (L) c 100 280 OC 240 80 200 60 160 120 40 80 � V 125°C 20 j � 40 V � 15 V V � 15 V D D T � 25°C j 0 0 0 5 10 20 15 25 0 100 200 400 300 500 600 700 Carrier frequency f (kHz) Collector-emitter voltage V (V) c CE R – t inverter stage th (t) w 1 Tc � 25°C Diode stage 0.1 Transistor stage 0.01 0.001 0.001 0.01 0.1 1 10 Pulse width t (s) w 9 2001-11-13 Transient thermal resistance R (°C/W) Low side control circuit current I (mA) Overcurrent protection trip level OC (A) th (t) D (L) Collector current I (A) High side control circuit current I (mA) C D (H) MIG150Q6CMB1X Turn on loss – I Turn off loss – I C C 100 100 T � 125°C T � 125°C j j 10 10 T � 25°C j T � 25°C j 1 1 0.1 0.1 V � 600 V V � 600 V CC CC V � 15 V V � 15 V D D L-Load L-Load 0.01 0.01 0 50 100 200 150 0 50 100 200 150 Collector current I (A) Collector current I (A) C C 10 2001-11-13 Turn on loss Eon (mJ) Turn off loss Eoff (mJ) MIG150Q6CMB1X RESTRICTIONS ON PRODUCT USE 000707EAA �� TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. �� The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. �� The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. �� The information contained herein is subject to change without notice. 11 2001-11-13