PANASONIC SEMICONDUCTOR SOLUTIONS AN8002M-E1

Voltage Regulators AN80xx/AN80xxM Series 3-pin, positive output, low dropout voltage regulator (50 mA type) � Overview AN80xx series Unit: mm 5.0±0.2 4.0±0.2 The AN80xx series and the AN80xxM series are 3- pin, low dropout, fixed positive output type monolithic voltage regulators. Since their power consumption can be minimized, they are suitable for battery-used power 2.3±0.2 supply and reference voltage. 13 types of output voltage 0.6±0.15 are available; 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000 only), 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V. � Features +0.1 +0.1 0.43 0.43 –0.05 –0.05 • Input/output voltage difference: 0.3V max. 2.54 • Output current of up to 50mA 1: Input • Low bias current: 0.6mA typ. 2: Output 21 3 3: GND • Output voltage: 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000 SSIP003-P-0000 only), 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V • Built-in overcurrent protection circuit AN80xxM series Unit: mm 1.6 max. 4.6 max. 1.8 max. 0.48 max. 0.58 max. 0.44 max. 1.5 1.5 3.0 1: Output 2: GND 3: Input 32 1 HSIP003-P-0000B Note) The packages (SSIP003-P-0000 and HSIP003- P-0000B) of this product will be changed to � Block Diagram (AN80xxM series) lead-free type (SSIP003-P-0000S and HSIP003-P-0000Q). See the new package di- mensions section later of this datasheet. Voltage + R2 Starter Reference Error Amp. − R 1 Current Limiter R = 5kΩ 1 3 2 1 C = 0.33µF IN − + (1) (3) (2) C = 10µF OUT V V I O C IN C OUT Note) The number in ( ) shows the pin number for the AN80xx series. Publication date: December 2001 SFF00007CEB 1 2.6 typ. (1.0) (1.0) 13.5±0.5 5.1±0.2 0.8 min. 2.6 max. 4.25 max. AN80xx/AN80xxM Series � Absolute Maximum Ratings at T = 25°C a Parameter Symbol Rating Unit Supply voltage VI 20 V Supply current I 100 CC mA * Power dissipation P 650 mW D Operating ambient temperature T −30 to +80 °C opr AN80xx series −55 to +150 Storage temperature T °C stg AN80xxM series −55 to +125 2 * AN80xxM series is mounted on standard board (glass epoxy: 20mm × 20mm × t1.7mm with Cu foil of 1cm or more). � Electrical Characteristics at T = 25°C a • AN8002, AN8002M (2V type) Parameter Symbol Conditions Min Typ Max Unit Output voltage V T = 25°C 1.92 2 2.08 V O j Line regulation REG V = 2.5 to 8V, T = 25°C 2 40 mV IN I j I = 1 to 40mA, T = 25°C 7 20 mV O j Load regulation REGL I = 1 to 50mA, T = 25°C 10 25 mV O j VI = 1.9V, IO = 20mA, Tj = 25°C 0.06 0.2 V Minimum input/output voltage difference V DIF(min) VI = 1.9V, IO = 50mA, Tj = 25°C 0.12 0.3 V Bias current IBias IO = 0mA, Tj = 25°C 0.6 1 mA Ripple rejection ratio RR VI = 3 to 5V, f = 120Hz 62 74 dB Output noise voltage Vno f = 10Hz to 100kHz 60 µV Output voltage temperature coefficient ∆VO/Ta Tj = −30 to +125°C 0.1 mV/°C Note 1) The specified condition T = 25°C means that the test should be carried out within so short a test time (within 10ms) that the j characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, V = 3V, I = 20mA and C = 10µF. I O O • AN8025, AN8025M (2.5V type) Parameter Symbol Conditions Min Typ Max Unit Output voltage V T = 25°C 2.4 2.5 2.6 V O j Line regulation REG V = 3 to 8.5V, T = 25°C 2.5 50 mV IN I j IO = 1 to 40mA, Tj = 25°C 8 20 mV Load regulation REG L 12.5 25 mV IO = 1 to 50mA, Tj = 25°C V = 2.4V, I = 20mA, T = 25°C 0.07 0.2 V I O j Minimum input/output voltage difference VDIF(min) V = 2.4V, I = 50mA, T = 25°C 0.12 0.3 V I O j Bias current I I = 0mA, T = 25°C 0.6 1 mA Bias O j Ripple rejection ratio RR V = 3.5 to 5.5V, f = 120Hz 60 72 dB I Output noise voltage V f = 10Hz to 100kHz 65 µV no Output voltage temperature coefficient ∆V /T T = −30 to +125°C 0.13 mV/°C O a j Note 1) The specified condition T = 25°C means that the test should be carried out within so short a test time (within 10ms) that the j characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, V = 3.5V, I = 20mA and C = 10µF. I O O SFF00007CEB 2 AN80xx/AN80xxM Series � Electrical Characteristics at T = 25°C (continued) a • AN8003, AN8003M (3V type) Parameter Symbol Conditions Min Typ Max Unit Output voltage V T = 25°C 2.88 3 3.12 V O j Line regulation REG V = 3.5 to 9V, T = 25°C 3 50 mV IN I j I = 1 to 40mA, T = 25°C 9 25 mV O j Load regulation REGL I = 1 to 50mA, T = 25°C 15 30 mV O j VI = 2.9V, IO = 20mA, Tj = 25°C 0.07 0.2 V Minimum input/output voltage difference V DIF(min) VI = 2.9V, IO = 50mA, Tj = 25°C 0.12 0.3 V Bias current IBias IO = 0mA, Tj = 25°C 0.6 1 mA Ripple rejection ratio RR VI = 4 to 6V, f = 120Hz 58 70 dB Output noise voltage Vno f = 10Hz to 100kHz 70 µV Output voltage temperature coefficient ∆VO/Ta Tj = −30 to +125°C 0.15 mV/°C Note 1) The specified condition T = 25°C means that the test should be carried out within so short a test time (within 10ms) that the j characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, V = 4V, I = 20mA and C = 10µF. I O O • AN8035(3.5V type) yp Parameter Symbol Conditions Min Typ Max Unit Output voltage V T = 25°C 3.36 3.5 3.64 V O j Line regulation REGIN VI = 4 to 9.5V, Tj = 25°C 3.5 50 mV I = 1 to 40mA, T = 25°C 10 30 mV O j Load regulation REG L I = 1 to 50mA, T = 25°C 20 40 mV O j V = 3.4V, I = 20mA, T = 25°C 0.07 0.2 V I O j Minimum input/output voltage difference V DIF(min) V = 3.4V, I = 50mA, T = 25°C 0.12 0.3 V I O j Bias current I I = 0mA, T = 25°C 0.6 1 1 mA Bias O j Ripple rejection ratio RR V = 4.5 to 6.5V, f = 120Hz 57 69 dB I Output noise voltage V f = 10Hz to 100kHz 75 µV no Output voltage temperature coefficient ∆V /T T = −30 to +125°C 0.2 mV/°C O a j Note 1) The specified condition T = 25°C means that the test should be carried out within so short a test time (within 10ms) that the j characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, V = 4.5V, I = 20mA and C = 10µF. I O O • AN8004, AN8004M (4V type) Parameter Symbol Conditions Min Typ Max Unit Output voltage V T = 25°C 3.84 4 4.16 V O j Line regulation REG V = 4.5 to 10V, T = 25°C 3.5 50 mV IN I j I = 1 to 40mA, T = 25°C 10 30 mV O j Load regulation REG L 20 40 mV I = 1 to 50mA, T = 25°C O j V = 3.8V, I = 20mA, T = 25°C 0.07 0.2 V I O j Minimum input/output voltage difference V DIF(min) V = 3.8V, I = 50mA, T = 25°C 0.12 0.3 I O j V Bias current I = 0mA, T = 25°C 0.6 1 IBias O j mA Ripple rejection ratio V = 5 to 7V, f = 120Hz 56 67 RR I dB Output noise voltage f = 10Hz to 100kHz 80 Vno µV Output voltage temperature coefficient T = −30 to +125°C ∆VO/Ta j 0.2 mV/°C Note 1) The specified condition T = 25°C means that the test should be carried out within so short a test time (within 10ms) that the j characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, V = 5V, I = 20mA and C = 10µF. I O O SFF00007CEB 3 AN80xx/AN80xxM Series � Electrical Characteristics at T = 25°C (continued) a • AN8045, AN8045M (4.5V type) Parameter Symbol Conditions Min Typ Max Unit Output voltage V T = 25°C 4.32 4.5 4.68 V O j Line regulation REG V = 5 to 10.5V, T = 25°C 4 50 mV IN I j I = 1 to 40mA, T = 25°C 11 35 mV O j Load regulation REG L I = 1 to 50mA, T = 25°C 23 45 mV O j V = 4.3V, I = 20mA, T = 25°C I O j 0.07 0.2 V Minimum input/output voltage difference V DIF(min) V = 4.3V, I = 50mA, T = 25°C I O j 0.12 0.3 V Bias current I = 0mA, T = 25°C IBias O j 0.7 1 mA Ripple rejection ratio RR VI = 5.5 to 7.5V, f = 120Hz 54 66 dB Output noise voltage Vno f = 10Hz to 100kHz 85 µV Output voltage temperature coefficient ∆VO/Ta Tj = −30 to +125°C 0.23 mV/°C Note 1) The specified condition T = 25°C means that the test should be carried out within so short a test time (within 10ms) that the j characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, V = 5.5V, I = 20mA and C = 10µF. I O O • AN8005, AN8005M (5V type) Parameter Symbol Conditions Min Typ Max Unit Output voltage V Tj = 25°C 4.8 5 5.2 V O Line regulation REG V = 5.5 to 11V, T = 25°C 4.5 50 mV IN I j I = 1 to 40mA, T = 25°C 12 40 mV O j Load regulation REG L I = 1 to 50mA, T = 25°C 25 50 mV O j V = 4.8V, I = 20mA, T = 25°C 0.07 0.2 V I O j Minimum input/output voltage difference V DIF(min) V = 4.8V, I = 50mA, T = 25°C 0.12 0.3 V I O j Bias current I I = 0mA, T = 25°C 0.7 1 mA Bias O j Ripple rejection ratio RR V = 6 to 8V, f = 120Hz 52 64 dB I Output noise voltage V f = 10Hz to 100kHz 95 µV no Output voltage temperature coefficient ∆V /T T = −30 to +125°C 0.25 mV/°C O a j Note 1) The specified condition T = 25°C means that the test should be carried out within so short a test time (within 10ms) that the j characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, V = 6V, I = 20mA and C = 10µF. I O O • AN8006, AN8006M (6V type) Parameter Symbol Conditions Min Typ Max Unit Output voltage V T = 25°C 5.76 6 6.24 V O j Line regulation REG V = 6.5 to 12V, T = 25°C 5.5 60 mV IN I j I = 1 to 40mA, T = 25°C 13 45 mV O j Load regulation REGL I = 1 to 50mA, T = 25°C 28 55 mV O j V = 5.8V, I = 20mA, T = 25°C 0.07 0.2 V I O j Minimum input/output voltage difference V DIF(min) V = 5.8V, I = 50mA, T = 25°C 0.13 0.3 V I O j Bias current I I = 0mA, T = 25°C 0.7 1.2 mA Bias O j Ripple rejection ratio RR V = 7 to 9V, f = 120Hz 51 63 dB I Output noise voltage V f = 10Hz to 100kHz 105 µV no Output voltage temperature coefficient ∆V /T T = −30 to +125°C 0.3 mV/°C O a j Note 1) The specified condition T = 25°C means that the test should be carried out within so short a test time (within 10ms) that the j characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, V = 7V, I = 20mA and C = 10µF. I O O SFF00007CEB 4 AN80xx/AN80xxM Series � Electrical Characteristics at T = 25°C (continued) a • AN8007, AN8007M (7V type) Parameter Symbol Conditions Min Typ Max Unit Output voltage V Tj = 25°C 6.72 7 7.28 V O Line regulation REG V = 7.5 to 13V, T = 25°C 6.5 70 mV IN I j I = 1 to 40mA, T = 25°C 14 50 mV O j Load regulation REG L I = 1 to 50mA, T = 25°C 31 60 mV O j V = 6.8V, I = 20mA, T = 25°C 0.07 0.2 V I O j Minimum input/output voltage difference V DIF(min) V = 6.8V, I = 50mA, T = 25°C 0.13 0.3 V I O j Bias current I I = 0mA, T = 25°C 0.7 1.3 mA Bias O j Ripple rejection ratio RR V = 8 to 10V, f = 120Hz 50 62 dB I Output noise voltage V f = 10Hz to 100kHz 120 µV no Output voltage temperature coefficient ∆V /T T = −30 to +125°C 0.35 mV/°C O a j Note 1) The specified condition T = 25°C means that the test should be carried out within so short a test time (within 10ms) that the j characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, V = 8V, I = 20mA and C = 10µF. I O O • AN8008, AN8008M (8V type) yp Parameter Symbol Conditions Min Typ Max Unit Output voltage V T = 25°C 7.68 8 8.32 V O j Line regulation REGIN VI = 8.5 to 14V, Tj = 25°C 7.5 80 mV I = 1 to 40mA, T = 25°C 15 55 mV O j Load regulation REG L I = 1 to 50mA, T = 25°C 34 65 mV O j V = 7.8V, I = 20mA, T = 25°C 0.07 0.2 V I O j Minimum input/output voltage difference V DIF(min) V = 7.8V, I = 50mA, T = 25°C 0.14 0.3 V I O j Bias current I I = 0mA, T = 25°C 0.7 1.3 mA Bias O j Ripple rejection ratio RR V = 9 to 11V, f = 120Hz 49 61 dB I Output noise voltage V f = 10Hz to 100kHz 135 µV no Output voltage temperature coefficient ∆V /T T = −30 to +125°C 0.4 mV/°C O a j Note 1) The specified condition T = 25°C means that the test should be carried out within so short a test time (within 10ms) that the j characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, V = 9V, I = 20mA and C = 10µF. I O O • AN8085, AN8085M (8.5V type) yp Parameter Symbol Conditions Min Typ Max Unit Output voltage V T = 25°C 8.16 8.50 8.84 V O j Line regulation REG V = 9 to 14.5V, T = 25°C 8.3 90 mV IN I j I = 1 to 40mA, T = 25°C O j 16 60 mV Load regulation REG L I = 1 to 50mA, T = 25°C 36 70 mV O j V = 8.3V, I = 20mA, T = 25°C 0.07 0.2 V I O j Minimum input/output voltage difference V DIF(min) V = 8.3V, I = 50mA, T = 25°C 0.14 0.3 V I O j Bias current I I = 0mA, T = 25°C 0.8 1.4 mA Bias O j Ripple rejection ratio RR V = 9.5 to 11.5V, f = 120Hz 48 60 dB I Output noise voltage V f = 10Hz to 100kHz 140 µV no Output voltage temperature coefficient ∆V /T T = −30 to +125°C 0.43 mV/°C O a j Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 9.5V, IO = 20mA and CO = 10µF. SFF00007CEB 5 AN80xx/AN80xxM Series � Electrical Characteristics at T = 25°C (continued) a • AN8009, AN8009M (9V type) Parameter Symbol Conditions Min Typ Max Unit Output voltage V T = 25°C 8.64 9 9.36 V O j Line regulation REG V = 9.5 to 15V, T = 25°C 9 100 mV IN I j I = 1 to 40mA, T = 25°C O j 17 70 mV Load regulation REG L I = 1 to 50mA, T = 25°C 37 75 mV O j V = 8.8V, I = 20mA, T = 25°C 0.07 0.2 V I O j Minimum input/output voltage difference V DIF(min) V = 8.8V, I = 50mA, T = 25°C 0.14 0.3 V I O j Bias current I I = 0mA, T = 25°C 0.8 1.4 mA Bias O j Ripple rejection ratio RR V = 10 to 12V, f = 120Hz 47 59 dB I Output noise voltage V f = 10Hz to 100kHz 150 µV no Output voltage temperature coefficient ∆V /T T = −30 to +125°C 0.45 mV/°C O a j Note 1) The specified condition T = 25°C means that the test should be carried out within so short a test time (within 10ms) that the j characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, V = 10V, I = 20mA and C = 10µF. I O O • AN8010, AN8010M (10V type) Parameter Symbol Conditions Min Typ Max Unit Output voltage V T = 25°C 9.6 10 10.4 V O j Line regulation REG V = 10.5 to 16V, T = 25°C 10 100 mV IN I j I = 1 to 40mA, T = 25°C 18 75 mV O j Load regulation REG L I = 1 to 50mA, T = 25°C 40 85 mV O j V = 9.8V, I = 20mA, T = 25°C 0.07 0.2 V I O j Minimum input/output voltage difference V DIF(min) V = 9.8V, I = 50mA, T = 25°C 0.14 0.3 V I O j Bias current I I = 0mA, T = 25°C 0.8 1.4 mA Bias O j Ripple rejection ratio RR V = 11 to 13V, f = 120Hz 46 58 dB I Output noise voltage V f = 10Hz to 100kHz 165 µV no Output voltage temperature coefficient ∆V /T T = −30 to +125°C 0.5 mV/°C O a j Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 11V, IO = 20mA and CO = 10µF. SFF00007CEB 6 AN80xx/AN80xxM Series � Main Characteristics P  T (AN80xx series) P  T (AN80xxM series) D a D a 800 800 Mounted on standard board 3 glass epoxy: 20 × 20 × t1.7mm 700 700 2 with Cu foil of 1cm or more 600 600 500 500 400 400 300 300 200 200 100 100 0 0 0 20406080 100 120 140 160 0 20406080 100 120 140 160 Ambient temperature T (°C) Ambient temperature T (°C) a a RR  f V  V O I 12 AN8005 C = 10µF O 80 I = 0mA O AN8010/M 10 70 8 60 6 AN8005/M 50 4 40 AN8002/M 2 30 0 50 100 300 500 1k 3k 5k 10k 30k 50k 100k 0 5 10 15 20 Frequency f (Hz) Input voltage V (V) I V  I V  T O O O a 5.3 5.3 AN8005 AN8005 V = 6V I 5.2 V = 6V 5.2 I C = 10µF O C = 10µF O I = 0mA O 5.1 5.1 5.0 5.0 4.9 4.9 4.8 4.8 4.7 4.7 0 102030405060708090 100 −40 −20 0 20 40 60 80 100 120 140 160 Output current IO (mA) Ambient temperature Ta (°C) SFF00007CEB 7 Power dissipation P (mW) D Output voltage VO (V) Ripple rejection ratio RR (dB) Power dissipation P (mW) D Output voltage V (V) O Output voltage V (V) O AN80xx/AN80xxM Series � Application Circuit Example V V I O AN80xx AN80xxM Series + 0.33µF 10µF − • AN80xx and AN80xxM series have their internal gain increased in order to improve performance. When the power line on the output side is long, use a capacitor of 10µF. Also, the capacitor on the output side should be attached as close to the IC as possible. • When using at a low temperature, it is recommended to use the capacitors with low internal impedance (for example, tantalum capacitor) for output capacitors. � New Package Dimensions (Unit: mm) • SSIP003-P-0000S (Lead-free package) 5.00±0.20 4.00±0.20 0.60±0.15 2.30±0.20 +0.10 0.40 0.40±0.10 -0.05 1 3 1.27 1.27 • HSIP003-P-0000Q (Lead-free package) 4.50±0.10 1.55±0.20 1 3 +0.10 +0.10 +0.10 0.40 0.40 0.42 -0.05 -0.05 -0.05 0.15 M +0.10 0.50 -0.05 1.50 3.00 (0.75) 0.10 SFF00007CEB 8 +0.25 4.00 -0.20 (0.40) 1.50±0.10 2.50±0.10 (1.00) (1.00) 5.00±0.20 13.30±0.50 +0.10 2.65±0.10 1.00 -0.20 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Govern- ment if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may ap- pear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR