Prepared Ref No. A-1 Product Specifications Checked Total Page 8 AN7580 Approved Page No. 1 Structure Silicon Monolithic Bipolar IC SIL-12 Pins Plastic Package Appearance (FP-12S Power Type With Fin) Application Audio 25W (6Ω) x 2ch BTL Power Amplifier Function Built-in Standby and Muting Features Incorporating Various Protection Circuits Absolute Maximum Ratings A No. Item Symbol Ratings Unit Note Tstg -55 ~ +150 ° C Storage Temperature 1 Topr -25 ~ +75 Operating Ambient Temperature ° C 2 Popr Pa Operating Ambient Pressure 1.013x105 ±0.61x105 3 2 Gopr m / s Operating Constant Acceleration 9,810 4 2 Sopr m / s 4,900 5 Operating Shock 24 Power Supply V oltage Vcc V 1 6 Icc 8.0 A 7 Power Supply Current PD 37.5 8 Power Dissipation W 2 Operating Supply V oltage Range Vcc 8.0 V ~ 20.0 V Note: 1) Without input signal, Vcc is up to 27V 2) Ta = 75°C with infinite heatsink Eff. Date Eff. Date Eff. Date Eff. Date 09-JUL-2001 FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Prepared Ref No. B-1 Product Specifications Checked Total Page 8 AN7580 Approved Page No. 2 Electrical Characteristics < Vcc = 12V, RL = 4Ω, freq. = 1 kHz, 2 Channel Outputs > B (Unless otherwise specified, the ambient temperature is 25°C±2°C) Limit Test Condition No. Unit Note Item Symbol Cct. Min Typ Max Vin=0mV 150 300 mA 1 Quiescent Circuit Current Icq 1 - Vin=0mV , Rg=20kΩ 0.27 0.5 mVrms 1 2 Output Noise V oltage Vno 1 - Vin=20mV 38 40 42 dB 3 V oltage Gain Gvc 1 Vin=20mV 0.07 0.4 % 2 4 Total Harmonic Distortion THD 1 - THD=10% W 5 Maximum Output Power 1 Po1 1 - 12 15 VCC=18V, RL=6Ω, W 6 Maximum Output Power 2 Po2 1 21.5 - 25 THD=10% Vin=20mV -1 0 1 dB 7 Channel Balance CB 1 Vin=20mV , Rg =20kΩ 55 70 dB 2 8 Channel Crosstalk CT 1 - 9 Output Offset V oltage V off 1 Rg=20kΩ -350 0 350 mV Vr=1Vrms, 10 Ripple Rejection RR 1 50 60 - dB 1 fr=120Hz, Rg=20kΩ Vin=0mV 11 Standby Current I STB 1 1 10 µA - Vin=20mV 70 80 dB 2 12 Muting Effects MT 1 - Note : 1) With a filter band 20Hz ~20kHz (12 dB/OCT) used. 2) With a filter band 400Hz ~30kHz used. Eff. Date Eff. Date Eff. Date Eff. Date 09-JUL-2001 FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Prepared Ref No. C-1 Product Specifications Checked Total Page 8 AN7580 Approved Page No. 3 Description of Test Circuits and Test Methods [Test Circuit 1] AN7580 1 2 4 5 6 7 8 9 12 3 10 11 Vcc + 10µ 33µ + + 51kΩ 2200µ V out1 V out2 8.2kΩ 20kΩ RL 4Ω RL 4Ω 20kΩ STB MUTE ON ON OFF OFF Vin1 Vin2 3V 5V Note : * STB 'OFF' means 5V . MUTE 'OFF' means 0V . Eff. Date Eff. Date Eff. Date Eff. Date 09-JUL-2001 FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Prepared Ref No. D-1 Product Specifications Checked Total Page 8 AN7580 Approved Page No. 4 Circuit Function Block Diagram Protection Circuit Thermal Shutdown REF Load Short Vcc Short Ground Short ASO Protect + + - - Standby MUTE Circuit 1 2 3 4 5 6 7 8 9 10 11 12 Pin Descriptions Pin No. Pin Descriptions Pin No. Pin Descriptions 1 Vcc 7 Pre GND 2 Ch1 +ve Phase Output 8 Ch2 Input 3 Ch1 Output GND 9 Mute 4 Ch1 -ve Phase Output 10 Ch2 -ve Phase Output 5 Standby 11 Ch2 Output GND 6 Ch1 Input 12 Ch2 +ve Phase Output Eff. Date Eff. Date Eff. Date Eff. Date 09-JUL-2001 FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. + + - + + - - - Prepared Ref No. E Product Specifications Checked Total Page 8 AN7580 Approved Page No. 5 Package Name FP-12S Unit : mm ∅ 3.6 6.4 ± 0.3 7.7 ± 0.3 7.8 ± 0.3 Name of item Date Code Company insignia Eff. Date Eff. Date Eff. Date Eff. Date 09-JUL-2001 FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. 29.96 ± 0.3 28.0 ± 0.3 20.0±0.1 1.2 ± 0.1 0.6 R1.8 1 12 +0.1 0.25 -0.05 2.54 0.6 ± 0.1 3.5 ± 0.3 29.6 ± 0.3 Prepared Ref No. F-1 Product Specifications Checked Total Page 8 AN7580 Approved Page No. 6 (Structure Description) Chip surface passivation SiN, PSG, Others ( ) 1 Lead frame material Fe group, Cu group, Others ( ) 2 , 6 Inner lead surface process Ag plating, Au plating, Others ( ) 2 Outer lead surface process Solder plating, Solder dip, Others ( ) 6 Chip mounting method Ag paste, Au-Si alloy, Solder, Others ( ) 3 Wire bonding method Thermalsonic bonding, Others ( ) 4 Wire material, Diameter Au, Diameter 38 µm Others ( ) 4 Mold material Epoxy, Others ( ) 5 Molding method Transfer mold, Multiplunger mold, Others ( ) 5 Fin material Cu Group Others ( ) 7 Package FP-12S 6 1 5 3 4 2 Eff. Date Eff. Date Eff. Date Eff. Date 09-JUL-2001 FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Prepared Ref No. G-1 Product Specifications Checked Total Page 8 AN7580 Approved Page No. 7 Application Circuit VCC 12V Input 2200µ VCC GND 7 1 OUT1 2 40dB Output1 IN 1 6 RL GND 3 4Ω 40dB 4 51k OUT1 5 STB 10µ STB Vref MUTE 8.2k 9 MUTE OUT2 33µ 40dB 10 Output2 GND RL 11 IN 2 8 4Ω 40dB 12 OUT2 STB 'OFF' 5V STB 'ON' 0V Mute 'OFF' 0V Mute 'ON' 3V Eff. Date Eff. Date Eff. Date Eff. Date 09-JUL-2001 FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Prepared Ref No. G-2 Product Specifications Checked Total Page 8 AN7580 Approved Page No. 8 PD - Ta Curves (1) Tc = Ta, 62.5W ( θj-c = 2 °C/W ) (2) 20.83W ( θf = 4.0 °C/W ) 2 With a 100cm X 3mm Al heat sink (black colour coated) 2 or a 200cm X 2mm Al heat sink (not lacquered) (3) 15.63W ( θf = 6.0 °C/W ) 2 With a 100cm X 2mm Al heat sink (not lacquered) (4) 3.0W at Ta = 25°C ( θj-a = 42°C/W ) Without heat sink 80 70 62.5W 60 (1) 50 40 30 20.8W (2) 20 15.6W (3) 10 3.0W (4) 0 0 25 50 75 100 125 150 Ambient Temperature Ta ( °C ) Eff. Date Eff. Date Eff. Date Eff. Date 09-JUL-2001 FMSC-PSDA-002-01 Rev.1 Semiconductor Company, Matsushita Electric Industrial Co., Ltd. Power Dissipation PD ( W )