KINGSTON KHX1600C9D3K3/12GX
Specifications
CL(IDD)
9 cycles
Operating Temperature
0o C to 85o C
Power (Operating)
1.410 W (per module)
Refresh to Active/Refresh, Command Time (tRFCmin)
160ns (min.)
Row Active Time (tRASmin)
36ns (min.)
Row Cycle Time (tRCmin)
49.5ns (min.)
Storage Temperature
-55o C to +100o C
UL Rating
94 V - 0
Features
- 3.9us at 85°C
- 667MHz fCK for 1333Mb/sec/pin
- 8 independent internal bank
- 8-bit pre-fetch
- Asynchronous Reset
- Average Refresh Period 7.8us at lower than TCASE 85°C,
- Bi-directional Differential Data Strobe
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
- On Die Termination using ODT pin
- PCB : Height 1.180” (30.00mm), double sided component
- Posted CAS
- Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
- Programmable CAS Latency: 9, 8, 7, 6
- Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
- VDDQ - 1.5V (1.425V ~ 1.575V)
Datasheet
Extracted Text
Memory Module SpeciŢ cations KHX1600C9D3K3/12GX 12GB (4GB 512M x 64-Bit x 3 pcs.) DDR3-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh 160ns (min.) Command Time (tRFCmin) Row Active Time (tRASmin) 36ns (min.) Power (Operating) 1.410 W* (per module) UL Rating 94 V - 0 o o Operating Temperature 0 C to 85 C o o Storage Temperature -55 C to +100 C *Power will vary depending on the SDRAM used. DESCRIPTION FEATURES Kingston's KHX1600C9D3K3/12GX is a kit of three 512M x 64- • JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply bit (4GB) DDR3-1600 CL9 SDRAM (Synchronous DRAM) 2Rx8 • VDDQ = 1.5V (1.425V ~ 1.575V) memory modules, based on sixteen 256M x 8-bit DDR3 FBGA • 667MHz fCK for 1333Mb/sec/pin ® components per module. Each module kit supports Intel XMP • 8 independent internal bank (Extreme Memory Profiles). Total kit capacity is 12GB. Each module kit has been tested to run at DDR3-1600 at a low • Programmable CAS Latency: 9, 8, 7, 6 latency timing of 9-9-9-27 at 1.65V. The SPDs are programmed • Posted CAS to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock Each 240-pin DIMM uses gold contact fingers and requires • Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) +1.5V. The JEDEC standard electrical and mechanical specifi- cations are as follows: • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB : Height 1.180” (30.00mm), double sided component Continued >> Document No. 4805280-001.E00 09/28/11 Page 1 continued HyperX MODULE DIMENSIONS ���������� ������ ������������������ ����� ����� ����� ����� ���� ���� MODULE WITH HEAT SPREADER FOR MORE INFORMATION, GO TO WWW.KINGSTON.COM All Kingston products are tested to meet our published specifications. Some motherboards or system configurations may not operate at the published HyperX memory speeds and timing settings. Kingston does not recommend that any user attempt to run their computers faster than the published speed. Overclocking or modifying your system timing may result in damage to computer components. Document No. 4805280-001.E00 Page 2 ���� �����
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